
Features
? Fast Read Access Time – 120 ns
? Fast Byte Write – 200 μs or 1 ms
? Self-timed Byte Write Cycle
– Internal Address and Data Latches
– Internal Control Timer
– Automatic Clear Before Write
?
Direct Microprocessor Control
– READY/BUSY Open Drain Output
– DATA Polling
?
?
?
?
?
?
Low Power
– 30 mA Active Current
– 100 μA CMOS Standby Current
High Reliability
– Endurance: 10 4 or 10 5 Cycles
– Data Retention: 10 Years
5V ± 10% Supply
CMOS and TTL Compatible Inputs and Outputs
JEDEC Approved Byte-wide Pinout
Commercial and Industrial Temperature Ranges
64K (8K x 8)
Parallel
EEPROMs
AT28C64
Description
The AT28C64 is a low-power, high-performance 8,192 words by 8-bit nonvolatile elec-
trically erasable and programmable read only memory with popular, easy-to-use fea-
tures. The device is manufactured with Atmel ’ s reliable nonvolatile technology.
(continued)
AT28C64X
Pin Configurations
PDIP, SOIC
Pin Name
Function
Top View
A0 - A12
CE
OE
WE
I/O0 - I/O7
RDY/BUSY
NC
Addresses
Chip Enable
Output Enable
Write Enable
Data Inputs/Outputs
Ready/Busy Output
No Connect
RDY/BUSY (or NC)
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
VCC
WE
NC
A8
A9
A11
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
DC
Don ’ t Connect
LCC, PLCC
Top View
TSOP
Top View
OE
A11
A9
1
2
3
28
27
26
A10
CE
I/O7
A8
NC
WE
VCC
RDY/BUSY (or NC)
A12
A7
A6
4
5
6
7
8
9
10
11
25
24
23
22
21
20
19
18
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A6
A5
A4
A3
A2
A1
A0
NC
I/O0
5
6
7
8
9
10
11
12
13
29
28
27
26
25
24
23
22
21
A8
A9
A11
NC
OE
A10
CE
I/O7
I/O6
A5
A4
12
13
17
16
A0
A1
A3
14
15
A2
Rev. 0001H – 12/99
Note: PLCC package pins 1 and 17 are
DON ’ T CONNECT.
1